2SK3749 NEC, 2SK3749 Datasheet
2SK3749
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2SK3749 Summary of contents
Page 1
... N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. ...
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... 90 10% Wave Form 10% 10 d(on) r d(off off Data Sheet D17136EJ1V0DS 2SK3749 MIN. TYP. MAX. UNIT µ 1.0 A µ ±5.0 A 0.9 1.2 1 Ω Ω 6.0 pF 8.0 pF 1 ...
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... A 25˚C –25˚ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 100 1 Data Sheet D17136EJ1V0DS 2SK3749 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 3.0 V 4.0 V 3 Drain to Source Voltage - 3 –25˚C A 25˚ ...
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... MHz 0 100 3 3 Ω 500 1000 Data Sheet D17136EJ1V0DS 2SK3749 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE C iss C oss C rss 100 V - Drain to Source Voltage - V DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.2 0.4 0.6 0.8 1 Source to Drain Voltage - V ...
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... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3749 Not all M8E 02. 11-1 ...