2SK3757 Toshiba Semiconductor, 2SK3757 Datasheet
2SK3757
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2SK3757 Summary of contents
Page 1
... AR (Note 150 ch −55~150 T stg Symbol Max R 4.17 th (ch-c) R 62.5 th (ch-a) = 25°C (initial 42.8 mH Ω 2SK3757 Unit Gate 2: Drain W 3: Source − JEDEC mJ JEITA SC-67 A TOSHIBA 2-10U1B mJ °C Weight: 1.7 g (typ.) °C Unit °C/W °C ...
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... Symbol Test Condition I DR (Note 1) I DRP = DSF /dt = 100 A/μ 2SK3757 Min Typ. ⎯ ⎯ ±30 ⎯ ⎯ ⎯ ⎯ 450 ⎯ 2.0 ⎯ 1.9 0.28 1.0 ⎯ 330 ⎯ 4 ⎯ 45 ⎯ OUT ⎯ ...
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... GATE−SOURCE VOLTAGE – (ON COMMON SOURCE Tc = 25°C PULSE TEST 10 0.5 0.1 0.3 0 DRAIN CURRENT I (A) D 2SK3757 COMMON SOURCE T = 25℃ Ｃ PULSE TEST 6.0 5 5.0V ＧＳ ( 2.0A Ｄ 1 2006-11-06 ...
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... CASE TEMPERATURE Tc (°C) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 500 COMMON SOURCE 25°C PULSE TEST 400 V DS 180 300 90 200 360 100 TOTAL GATE CHARGE Q (nC) g 2SK3757 −1.0 (V) 160 2006-11-06 ...
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... CHANNEL TEMPERATURE (INITIAL VDSS − TEST CIRCUIT WAVE FORM ⎛ ⎜ = ⋅ ⋅ ⋅ L Ε AS ⎜ VDSS ⎝ 2SK3757 150 (°C) DS ⎞ B VDSS ⎟ ⎟ − ⎠ 2006-11-06 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3757 20070701-EN 2006-11-06 ...