2SK3757 Toshiba Semiconductor, 2SK3757 Datasheet - Page 2

• Manufacturer Part Number: 2SK3757
• Description: Silicon N-Channel MOS Type Switching Regulator Applications
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Marking
Source-Drain Ratings and Characteristics
Gate leakage current
Gate -source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Switching time
K3757
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
g
Symbol
V
⎪
I
I
DRP
Q
DR
DSF
t
rr
rr
Duty < = 1%, t
V
I
V
I
V
V
V
V
V
V
G
D
GS
DS
DS
GS
DS
DS
DD
GS
= 10 mA, V
= ±10 μA, V
10 V
I
I
dI
0 V
DR
DR
= 450 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ±25 V, V
= 10 V, I
∼ − 360 V, V
DR
2
= 2 A, V
= 2 A, V
/dt = 100 A/μs
(Ta = 25°C)
w
Test Condition
D
D
D
GS
= 10 μs
GS
DS
Test Condition
= 1 mA
= 1 A
GS
= 1 A
DS
GS
GS
GS
= 0 V
= 0 V, f = 1 MHz
I
= 0 V
D
= 0 V
= 0 V
= 10 V, I
= 0 V
= 0 V,
= 1 A
⎯
⎯
V
DD
D
R
∼ − 200 V
= 2 A
L
= 200 Ω
V
OUT
0.28
±30
450
Min
Min
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1000
Typ.
Typ.
330
1.9
1.0
5.0
45
15
25
20
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
9
5
4
2006-11-06
2SK3757
Max
2.45
Max
−1.5
100
±10
4.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
5
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V