SUD50N04-16P Vishay, SUD50N04-16P Datasheet - Page 4

• Manufacturer Part Number: SUD50N04-16P
• Description: N-Channel 40-V (D-S) - 175 MOSFET
• Manufacturer: Vishay

SUD50N04-16P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
100
100
0.1
10
10
80
60
40
20
1
8
6
4
2
0
0
0.00
0.001
0
Single Pulse Power, Junction-to-Ambient
I
D
Source-Drain Diode Forward Voltage
= 30 A
V
0.2
0.01
DS
8
V
= 10 V
SD
Q
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
T
Gate Charge
V
J
DS
0.1
= 150 °C
16
= 20 V
Time (s)
0.6
T
24
1
J
= 25 °C
0.8
V
DS
= 30 V
10
32
1.0
1.2
100
40
- 0.1
- 0.4
- 0.7
- 1.0
- 1.3
100
1.8
1.5
1.2
0.9
0.6
0.5
0.2
80
60
40
20
0
- 50
- 50
0
0 .
0
I
D
1
= 15 A
- 25
On-Resistance vs. Junction Temperature
- 25
Single Pulse Power, Junction-to-Case
0
0
T
0.01
J
- Junction Temperature (°C)
Threshold Voltage
25
25
T
J
- Temperature (°C)
50
50
Time (s)
0.1
V
S-81956-Rev. B, 25-Aug-08
GS
75
75
Document Number: 74477
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= 4.5 V
I
D
= 250 µA
100
100
I
1
125
125
D
V
= 5 mA
GS
= 10 V
150
150
175
175
1
0