IDT70T3509M Integrated Device Technology, IDT70T3509M Datasheet - Page 20
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IDT70T3509M
Manufacturer Part Number
IDT70T3509M
Description
High-speed 2.5v 1024k X 36 Synchronous Dual-port Static Ram With 3.3v Or 2.5v Interface
Manufacturer
Integrated Device Technology
Datasheet
1.IDT70T3509M.pdf
(23 pages)
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and thus cannot be treated as a single JTAG device in the scan chain.
The four arrays (A, B, C and D) each have identical characteristics and
commands but must be treated as separate entities in JTAG operations.
Please refer to Figure 2.
JTAG Functionality and Configuration
information provided in the Identification Register Definitions, Scan
IDT70T3509M
High-Speed 2.5V
The IDT70T3509M is composed of four independent memory arrays,
JTAG signaling must be provided serially to each array and utilize the
TRST
TDI
TMS
TCK
1024K x 36 Dual-Port Synchronous Static RAM
TDOA
Figure 2. JTAG Configuration for IDT70T3509M
Array A
Array B
TDIB
TDOB
6.42
20
Register Sizes, and System Interface Parameter tables. Specifically, all
serial commands must be issued to the IDT70T3509M in the following
sequence: Array D, Array C, Array B, Array A. Please reference
Application Note AN-411, "JTAG Testing of Multichip Modules" for specific
instructions on performing JTAG testing on the IDT70T3509M. AN-411
is available at www.idt.com.
TDIC
TDID
IDT70T3509M
Array D
Array C
5682 drw 24
TDOC
Commercial Temperature Range
TDO