IDT70T3509M Integrated Device Technology, IDT70T3509M Datasheet - Page 7

• Manufacturer Part Number: IDT70T3509M
• Description: High-speed 2.5v 1024k X 36 Synchronous Dual-port Static Ram With 3.3v Or 2.5v Interface
• Manufacturer: Integrated Device Technology

Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
2. This is a steady-state DC parameter that applies after the power supply has reached its
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
NOTES:
1. These parameters are determined by device characterization, but are not
2. C
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
NOTES:
1. V
2. Applicable only for TMS, TDI and TRST inputs.
3. Outputs tested in tri-state mode.
Capacitance
(T
(V
(V
(INPUTS and I/O's)
I
I
V
V
V
T
T
T
OUT
OUT
BIAS
STG
JN
TERM
TERM
TERM
Symbol
DD
DDQ
IDT70T3509M
High-Speed 2.5V
V
V
V
V
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
nominal operating value. Power sequencing is not necessary; however, the voltage on
any Input or I/O pin cannot exceed V
production tested.
A
C
(For V
(For V
Symbol
OH
OH
OL
OL
)
C
OUT
OUT
DDQ
(3)
)
(2)
= +25°C, F = 1.0MH
(2)
IN
|I
|I
|I
Symbol
LO
(3.3V)
(3.3V)
(2.5V)
(2.5V)
LI
LI
(2)
also references C
|
|
|
is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
DDQ
DDQ
Input Capacitance
Output Capacitance
= 3.3V) DC Output Current
= 2.5V) DC Output Current
Input Leakage Current
JTAG & ZZ Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Parameter
Input and I/O Terminal
Storage Temperature
Junction Temperature
V
with Respect to GND
V
with Respect to GND
Voltage with Respect to GND
Temperature Under Bias
DD
DDQ
1024K x 36 Dual-Port Synchronous Static RAM
I/O
(1)
Terminal Voltage
.
Terminal Voltage
Parameter
Rating
(1)
(1)
Z
(1)
(1)
) BGA ONLY
DDQ
(1)
(1,3)
during power supply ramp up.
Conditions
V
V
OUT
IN
= 0V
= 0V
(1,2)
-0.3 to V
-0.3 to V
-0.5 to 3.6
-55 to +125
-65 to +150
I
I
I
I
V
V
CE
OL
OH
OL
OH
(1)
DDQ
DD =
Com'l
& Ind
+150
0
= +4mA, V
= +2mA, V
= -4mA, V
= -2mA, V
Max.
50
40
= V
35
35
DDQ
DDQ
= Max., V
Max.
IH
+ 0.3
+ 0.3
5682 tbl 07
and CE
,
Unit
V
pF
pF
IN
DDQ
DDQ
DDQ
DDQ
IN
= 0V to V
6.42
= 0V to V
1
= Min.
= Min.
5682 tbl 06
= Min.
= Min.
7
Unit
mA
mA
= V
o
o
o
V
V
V
C
C
C
Test Conditions
IL
, V
DD
OUT
DDQ
(V
= 0V to V
DD
= 2.5V ± 100mV)
DDQ
Commercial Temperature Range
Min.
2.4
2.0
___
___
___
___
___
70T3509MS
Max.
0.4
0.4
20
60
20
___
___
5682 tbl 08
Unit
µ A
µ A
µ A
V
V
V
V