SI5855DC Vishay Siliconix, SI5855DC Datasheet
SI5855DC
Available stocks
Related parts for SI5855DC
SI5855DC Summary of contents
Page 1
... 1206-8 ChipFETr Bottom View Ordering Information: Si5855DC-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T Continuous Drain Current (T = 150_C) (MOSFET) = 150_C) (MOSFET Pulsed Drain Current (MOSFET) ...
Page 2
... Si5855DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a a Junction-to-Ambient Junction-to-Foot Junction to Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current ...
Page 3
... Q - Total Gate Charge (nC) g Document Number: 72232 S-31406—Rev. A, 07-Jul-03 New Product 2 1.5 V 2.5 3.0 3 Si5855DC Vishay Siliconix MOSFET Transfer Characteristics 55_C C 8 25_C 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Capacitance 800 C iss 600 ...
Page 4
... Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 - 0 Temperature (_C) J www.vishay.com 4 New Product T = 25_C J 1.0 1.2 1.4 75 100 125 150 Safe Operating Area 100 I DM ...
Page 5
... Document Number: 72232 S-31406—Rev. A, 07-Jul-03 New Product - Square Wave Pulse Duration (sec Square Wave Pulse Duration (sec) 75 100 125 150 Si5855DC Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 90_C/W thJA (t) 3 ...
Page 6
... Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 6 New Product Capacitance 600 500 400 ...