SI5855DC Vishay Siliconix, SI5855DC Datasheet - Page 3

• Manufacturer Part Number: SI5855DC
• Description: P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Siliconix

Document Number: 72232
S-31406—Rev. A, 07-Jul-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
5
4
3
2
1
0
0.0
0
0
V
I
D
0.5
DS
= 2.7 A
= 10 V
On-Resistance vs. Drain Current
V
2
1
DS
1.0
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
V
D
- Total Gate Charge (nC)
GS
1.5
- Drain Current (A)
V
Gate Charge
= 1.8 V
4
2
GS
V
GS
= 2.5 V
2.0
= 5 thru 3 V
6
3
2.5
V
3.0
GS
8
4
= 4.5 V
2.5 V
1.5 V
2 V
3.5
New Product
4.0
10
5
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
0.0
- 50
0
C
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 2.7 A
0.5
= 4.5 V
V
4
GS
T
V
0
J
Transfer Characteristics
C
DS
- Junction Temperature (_C)
oss
- Gate-to-Source Voltage (V)
C
1.0
iss
- Drain-to-Source Voltage (V)
25
Capacitance
8
Vishay Siliconix
1.5
50
T
12
25_C
C
Si5855DC
75
= - 55_C
2.0
100
www.vishay.com
MOSFET
16
2.5
125_C
125
150
3.0
20
3