SI5855DC Vishay Siliconix, SI5855DC Datasheet - Page 6

• Manufacturer Part Number: SI5855DC
• Description: P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Siliconix

www.vishay.com
6
Si5855DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse
Single Pulse
0.02
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
600
500
400
300
200
100
-2
0
0
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
4
-2
New Product
10
V
KA
-1
- Reverse Voltage (V
Capacitance
8
12
1
10
-1
16
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
20
Notes:
P
DM
JM
- T
A
t
1
= P
1
t
2
DM
Z
thJA
thJA
100
t
t
(t)
1
2
= 95_C/W
S-31406—Rev. A, 07-Jul-03
Document Number: 72232
SCHOTTKY
600
10