SI6435 Fairchild Semiconductor, SI6435 Datasheet

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SI6435

Manufacturer Part Number
SI6435
Description
30V P-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Si6435DQ
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
Battery protection
DC/DC conversion
Power management
Load switch
J
DSS
GSS
D
, T
JA
Device Marking
STG
Semiconductor’s
6435
TSSOP-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
advanced
– Continuous
– Pulsed
Si6435DQ
Device
Parameter
Pin 1
PowerTrench
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
Features
–4.5 A, –30 V R
Extended V
High performance trench technology for extremely
Low profile TSSOP-8 package
low R
DS(ON)
5
6
7
8
GSS
Tape width
R
range ( 20V) for battery applications
DS(ON)
DS(ON)
–55 to +150
16mm
Ratings
–4.5
–30
–30
114
1.3
0.6
87
= 40 m @ V
= 70 m @ V
20
September 2001
4
3
2
1
GS
GS
= –10 V
= –4.5 V
Si6435DQ Rev B(W)
3000 units
Quantity
Units
C/W
W
V
V
A
C

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SI6435 Summary of contents

Page 1

... Reel Size 13’’ September 2001 = –10 V DS(ON –4.5 V DS(ON) GS range ( 20V) for battery applications Ratings Units – –4.5 A –30 1.3 W 0.6 –55 to +150 C 87 C/W 114 Tape width Quantity 16mm 3000 units Si6435DQ Rev B(W) ...

Page 2

... CA Min Typ Max Units –30 V –23 mV/ C –1 A 100 nA –100 nA –1 –1.7 – mV – 854 pF 215 pF 112 2 –1.25 A –0.75 –1.2 V Si6435DQ Rev B(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si6435DQ Rev B( 1.2 ...

Page 4

... ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 114°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 114 C/W JA P(pk ( Duty Cycle 100 1000 Si6435DQ Rev B(W) 30 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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