SI6435 Fairchild Semiconductor, SI6435 Datasheet - Page 4

• Manufacturer Part Number: SI6435
• Description: 30V P-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
0.01
100
0.1
10
1
10
Figure 9. Maximum Safe Operating Area.
0.1
8
6
4
2
0
0.001
Figure 7. Gate Charge Characteristics.
0.01
0
R
0.1
DS(ON)
SINGLE PULSE
0.0001
R
1
I
D
V
JA
T
= -4.5A
GS
A
= 114
LIMIT
= 25
= -10V
D = 0.5
0.2
o
0.1
0.05
o
C
0.02
C/W
0.01
-V
4
DS
SINGLE PULSE
, DRAIN-SOURCE VOLTAGE (V)
1
Q
g
0.001
, GATE CHARGE (nC)
DC
1s
8
Figure 11. Transient Thermal Response Curve.
100ms
V
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
DS
10ms
= -10V
10
0.01
1ms
12
100 s
-20V
-15V
100
16
0.1
t
1
, TIME (sec)
1200
1000
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
C
RSS
0.01
5
-V
C
Power Dissipation.
DS
OSS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
t
C
1
, TIME (sec)
ISS
15
1
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
JA
(t) = r(t) * R
10
A
100
20
= 114
t
1
= P * R
t
2
SINGLE PULSE
R
o
JA
T
C/W
A
= 114°C/W
100
JA
25
= 25°C
Si6435DQ Rev B(W)
1
JA
(t)
/ t
f = 1 MHz
V
GS
2
= 0 V
1000
1000
30