SI6435 Fairchild Semiconductor, SI6435 Datasheet - Page 3

• Manufacturer Part Number: SI6435
• Description: 30V P-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
16
12
30
25
20
15
10
Figure 3. On-Resistance Variation with
8
4
0
5
0
1
Figure 1. On-Region Characteristics.
1.5
-50
0
Figure 5. Transfer Characteristics.
V
V
GS
DS
V
I
D
= - 5V
= -10V
GS
= -4.5A
-25
= -10V
1
2
-V
-V
DS
T
GS
0
J
-6.0V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
25
2.5
2
-4.5V
50
3
3
75
-4.0V
T
A
= -55
100
o
C)
-3.5V
3.5
o
4
C
125
-3.0V
125
o
C
25
o
C
150
5
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.12
0.08
0.06
0.04
0.02
0.1
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
2.2
1.8
1.6
1.4
1.2
0.8
1
2
1
2
0
0
V
Drain Current and Gate Voltage.
T
GS
V
A
GS
= 0V
= 25
= -4.0V
Gate-to-Source Voltage.
o
0.2
-V
C
5
SD
-V
T
, BODY DIODE FORWARD VOLTAGE (V)
A
-4.5V
4
GS
= 125
, GATE TO SOURCE VOLTAGE (V)
T
A
0.4
-I
= 125
10
o
D
C
, DRAIN CURRENT (A)
-5.0V
o
C
-6.0V
0.6
15
6
25
o
C
-7.0V
0.8
20
-55
o
8
C
-8.0V
Si6435DQ Rev B(W)
25
1
I
D
= -2.3A
-10V
1.2
30
10