RMPA1959-108 Raytheon RF Components, RMPA1959-108 Datasheet

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RMPA1959-108

Manufacturer Part Number
RMPA1959-108
Description
Type = Cdma Power Amplifier ;; Circuit Description = PCS 3V Cdma & CDMA2000-1X Power Amplifier Module ;; Frequency = 1850-1910 MHZ
Manufacturer
Raytheon RF Components
Datasheet
RF Components
www.raytheonrf.com
Description
Module Block
Features
Absolute
Ratings
Diagram
1
The RMPA1959-108 power amplifier module (PAM) is designed for CDMA and CDMA2000-1X
personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50
ohms to minimize the use of external components and features advanced DC power management to
reduce current consumption during peak phone usage. High power-added efficiency and excellent
linearity are achieved using Raytheon RF Components’ InGaP Heterojunction Bipolar Transistor (HBT)
technology.
! Single positive-supply operation and power-down mode
! 38% CDMA efficiency at +28 dBm average output power
! Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry standard pinout
! Internally matched to 50 ohms and DC blocked RF input/output.
! Meets CDMA2000-1XRTT performance requirements
Note:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Specifications are based on most current or latest revision.
Revised February 6, 2003
VCC1, VCC2
RMPA1959-108 -
Power Amplifier Module
(1, 10)
RF IN
VREF
(5)
(2)
Parameter
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
RMPA1959 US PCS CDMA Power Amplifier Module
MATCHING
NETWORK
INPUT
INPUT STAGE
Page 1
Functional Block Diagram
BIAS
INPUT
STAGE
Vmode (4)
PCS 3V CDMA & CDMA2000-1X
COLLECTOR
INTERSTAGE
Control
Bias
MATCH
MMIC
Vcc1, Vcc2
BIAS
Symbol
Vmode
Tstg
Vref
Pin
OUTPUT STAGE
BIAS
OUTPUT
STAGE
Min
2.7
-55
0
0
PA MODULE
MATCHING
NETWORK
OUTPUT
+150
Max
5.0
5.0
3.0
+5
ADVANCED INFORMATION
VREF=3.07V (nom)
VCC=3.4V (nom)
1850-1910 MHz
50 Ohms I/O
RF OUT
GND
(3,6, 7, 9, 11)
Raytheon RF Components
(8)
Units
dBm
V
V
V
C
Andover, MA 01810
362 Lowell Street

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RMPA1959-108 Summary of contents

Page 1

... RF Components Power Amplifier Module Description The RMPA1959-108 power amplifier module (PAM) is designed for CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50 ohms to minimize the use of external components and features advanced DC power management to reduce current consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Raytheon RF Components’ ...

Page 2

... RMPA1959-108 - RF Components Power Amplifier Module Electrical 1 Characteristics www.raytheonrf.com Specifications are based on most current or latest revision. Revised February 6, 2003 PCS 3V CDMA & CDMA2000-1X Parameter Symbol Operating Frequency CDMA MODE Gain G Gp Max Linear Power Out Po Power-Added Efficiency PAEd Adjacent Channel ACPR Power Ratio +/-1 ...

Page 3

... RMPA1959-108 - RF Components Power Amplifier Module Package Outline Package Pinout www.raytheonrf.com Specifications are based on most current or latest revision. Revised February 6, 2003 PCS 3V CDMA & CDMA2000-1X Signal Section Name Description Input to PA; DC blocked; 5 dBm maximum input RF Out RF Output of PA; DC blocked DC Power ...

Page 4

... RMPA1959-108 - RF Components Power Amplifier Module Evaluation Board Layout DC Turn-On 1) Vcc1=Vcc2=3.4V (typical) Sequence 2) Vref=3.0V (typical) 3) Vmode=2.0V (Pout <16 dBm), 0V (Pout>16dBm) www.raytheonrf.com Specifications are based on most current or latest revision. Revised February 6, 2003 PCS 3V CDMA & CDMA2000-1X Page 4 ADVANCED INFORMATION Raytheon RF Components 362 Lowell Street ...

Page 5

... RMPA1959-108 - RF Components Power Amplifier Module Recommended Operating Conditions www.raytheonrf.com Specifications are based on most current or latest revision. Revised February 6, 2003 PCS 3V CDMA & CDMA2000-1X Parameter Symbol Supply Voltage Vcc1, Vcc2 RF Input Power CDMA Output Power Range Pout Reference Voltage Vref Note input power for CDMA Pout = +28dBm. ...

Page 6

... RMPA1959-108 - RF Components Power Amplifier Module Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. " Precautions to Avoid Permanent Device Damage: – Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices – Device Cleaning: Standard board cleaning techniques should not present device problems – ...

Page 7

... RMPA1959-108 - RF Components Power Amplifier Module " Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free Application attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a Information consistent thickness. " Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225° ...

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