RMBA09501A-58 Raytheon RF Components, RMBA09501A-58 Datasheet

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RMBA09501A-58

Manufacturer Part Number
RMBA09501A-58
Description
Circuit Description = Cellular 2 Watt Linear GAAS Mmic Power Amplifier ;; Frequency = 869-894 MHZ
Manufacturer
Raytheon RF Components
Datasheet
RF Components
www.raytheonrf.com
Characteristics
Description
Absolute
Electrical
Ratings
Features
2
The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon
RF Components’ pHEMT process. It is designed for use as a driver stage for Cellular base stations, or
as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high
linearity requirements for CDMA operation.
Notes:
1. Only under quiescent conditions – no RF applied.
2. V
3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the
4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at
5. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve
The device requires external input and output matching to 50 Ohms as shown in Figure 3 and the
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Parameter
Frequency Ranges
Gain (small signal)
Gain variation:
Noise Figure
Output power @ CDMA
OIP3
Specifications are based on most current or latest revision.
Revised June 27, 2003
Over frequency range
Over temperature range
average power within the 1.23 MHz channel at band center to the average power within a 30 KHz bandwidth at an 885
KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.
band-center.
IDQTOTAL=550mA can be used with nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been
optimized for CDMA operation. IDQ1 and IDQ2 (or IDQTOTAL) can be adjusted to optimize the linearity of the amplifier for
other modulation systems.
Parts List.
RMBA09501A-58 - Cellular 2 Watt Linear GaAs
MMIC Power Amplifier
DD
2 Watt Linear output power at 36 dBc ACPR1 for CDMA operation
OIP3 43 dBc at 27 and 30 dBm power output
Small Signal Gain of > 30 dB
Small outline SMD package
4
= 7.0V, T
Parameter
Drain Supply Voltage
Gate Supply Voltage
RF Input Power (from 50
Operating Case Temperature
Storage Temperature Range
c
= 25°C. Part mounted on evaluation board with input and output matching to 50 Ohms.
3
Min
869
30
33
43
+/-1.5
+/-2.5
Typ
35
45
1
6
Page 1
source) Pin
Max Unit
894
Symbol
dBm
MHz
dBc
Tstg
Vdd
Vgs
dB
dB
dB
dB
Tc
Parameter
Idd@33 dBm Pout - 7V
PAE@33 dBm Pout
Input VSWR (50 )
Drain Voltage (Vdd)
Gate Voltage (VG
Quiescent currents
Thermal Resistance
-40 to +100
(IDQ1, IDQ2)
-30 to +85
(Channel to Case) Rjc
Value
+10
-5
5
dBm
Unit
ºC
1
ºC
V
V
,VG
5
ADVANCED INFORMATION
2
)
5
-2
Min
Raytheon RF Components
150, 400
28.5
Typ
1.0
2:1
7.0
11
Andover, MA 01810
362 Lowell Street
-0.25 Volts
Max Unit
°C/W
Volts
mA
%
A

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RMBA09501A-58 Summary of contents

Page 1

... RMBA09501A-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier Description The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon RF Components’ pHEMT process designed for use as a driver stage for Cellular base stations the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation ...

Page 2

... Micro- and Pico-Cell base stations. Figure 1 shows the package outline and the pin designations. Figure 2 shows the functional block diagram of the packaged product. The RMBA09501A-58 requires external passive components for DC bias and RF input and output matching circuits as shown in Figure 3 and the Parts List. A recommended schematic circuit is shown in Figure 3 ...

Page 3

... RMBA09501A-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier Figure 3 Schematic for a Typical Test Evaluation Board (RMBA09501A-58-TB) Figure 4 Layout and Assembly of Test Evaluation Board (RMBA09501A- 58-TB, G657471) www.raytheonrf.com Specifications are based on most current or latest revision. Revised June 27, 2003 BA09501A HS (Heat-sink) is attached under base of RMBA09501A-58 ...

Page 4

... RMBA09501A-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier CAUTION: LOSS OF GATE VOLTAGES (Vg1, Vg2) WHILE CORRESPONDING DRAIN Test Procedure VOLTAGES (Vdd) ARE PRESENT CAN DAMAGE THE AMPLIFIER. for the evaluation board (RMBA09501A- The following sequence must be followed to properly test the amplifier. (It is necessary to add a fan to 58-TB) provide air cooling across the heat sink of RMBA09501A ...

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