RMBA09501-58 Raytheon RF Components, RMBA09501-58 Datasheet

no-image

RMBA09501-58

Manufacturer Part Number
RMBA09501-58
Description
Circuit Description = Cellular 2 Watt Linear GAAS Mmic Power Amplifier ;; Frequency = 869-894 MHZ
Manufacturer
Raytheon RF Components
Datasheet
1.RMBA09501-58.pdf (4 pages)
RF Components
www.raytheonrf.com
Characteristics
Description
Electrical
Absolute
Features
Ratings
2
Notes:
1. Only under quiescent conditions – no RF applied.
2. V
3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the
4. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve
5. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at band-
The device requires external input and output matching to 50 Ohms as shown in Figure 3 and the Parts
The RMBA09501-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF
Components’ pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as
the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high
linearity requirements for CDMA operation.
!
!
!
Parameter
Frequency Range
Gain (small signal)
Gain variation:
Noise Figure
Linear output power:
OIP3
Specifications are based on most current or latest revision.
Revised June 27, 2003
average power within the 1.23 MHz channel at band center to the average power within a 30 KHz bandwidth at an 885 KHz
offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.
IDQTOTAL=550mA can be used with nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been
optimized for CDMA operation. IDQ1 and IDQ2 (or IDQTOTAL) can be adjusted to optimize the linearity of the amplifier for
other modulation systems.
center.
List.
RMBA09501-58 - Cellular 2 Watt Linear GaAs
MMIC Power Amplifier
Over frequency range
Over temperature
range
for CDMA
2 Watt Linear output power at 36 dBc ACPR1 for CDMA
operation
Small Signal Gain of > 30 dB
Small outline SMD package
DD
= 7.0V, T
5
3
c
Parameter
Drain Supply Voltage
Gate Supply Voltage
RF Input Power (50 ohm Source) P
Case Operating Temperature
Storage Temperature
= 25°C. Part mounted on evaluation board with input and output matching to 50 Ohms.
Min
869
33
+/-1.5
+/2.5
Typ
35
43
1
6
Page 1
Max Unit
894 MHz
dB
dB
dB
dB
dBm
dBm
Symbol
V
V
T
T
C
S
DD
GS
RF
Parameter
Idd@33 dBm Pout - 7V
PAE@33 dBm Pout
Input VSWR (50 )
RF Input Power
Drain Voltage (V
Gate Voltages (VG
Quiescent currents
Thermal Resistance
Min
-30
-40
(IDQ1, IDQ2)
(Channel to Case) Rjc
Max
+10
-5
+5
+85
+100
DD
)
1
4
,VG
Units
dBm
ADVANCED INFORMATION
2
V
V
C
C
)
4
Min
-2
Raytheon RF Components
150, 400
28.5
Typ
1.0
2:1
7.0
+1
11
Andover, MA 01810
362 Lowell Street
Max Unit
-0.25 Volts
%
dBm
Volts
mA
°C/W
A

Related parts for RMBA09501-58

Image
Part Number
Description
Manufacturer
Datasheet
Request R
RMPA0951A-102
Part Number:
RMPA0951A-102
Description:
Type = Cdma ;; Circuit Description = 3V Cellular Cdma Power Amplifier Module ;; Frequency = 824-849 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA0951A-102.pdf (15 pages)
RMPA0959-108
Part Number:
RMPA0959-108
Description:
Type = Cellular Power Amplifier ;; Circuit Description = 3V Cellular Band Amps, Cdma & CDMA2000 Power Amplifier Module ;; Frequency = 824-849 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA0959-108.pdf (14 pages)
RMPA1751-102
Part Number:
RMPA1751-102
Description:
Type = PCS ;; Circuit Description = 3V PCS Cdma Power Amplifier Module ;; Frequency = 1720-1780 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA1751-102.pdf (17 pages)
RMPA1759-108
Part Number:
RMPA1759-108
Description:
Type = Cdma Power Amplifier ;; Circuit Description = Korean PCS 3V Cdma & CDMA2000-1X Power Amplifier Module ;; Frequency = 1720-1780 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA1759-108.pdf (7 pages)
RMPA1956-103
Part Number:
RMPA1956-103
Description:
Type = Amps, Cdma & CDMA2000-1X ;; Circuit Description = 3.5 V Dual Band Tri-mode Amps, Cdma &CDMA2000-1X Power Amplifier Module ;; Frequency = 824-1910 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA1956-103.pdf (15 pages)
RMPA1959-108
Part Number:
RMPA1959-108
Description:
Type = Cdma Power Amplifier ;; Circuit Description = PCS 3V Cdma & CDMA2000-1X Power Amplifier Module ;; Frequency = 1850-1910 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA1959-108.pdf (7 pages)
RMPA2000-58
Part Number:
RMPA2000-58
Description:
Circuit Description = 1.8-2.0 GHZ GAAS Mmic Power Amplifier ;; Frequency = 1.8-2 GHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA2000-58.pdf (3 pages)
RMPA2059-108
Part Number:
RMPA2059-108
Description:
Type = Wcdma ;; Circuit Description = 3V Wcdma Power Amplifier Module ;; Frequency = 1920-1980 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA2059-108.pdf (6 pages)
RMPA2450-58
Part Number:
RMPA2450-58
Description:
Circuit Description = 2.4-2.5 GHZ GAAS Mmic Power Amplifier ;; Frequency = 2.4-2.5 GHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA2450-58.pdf (5 pages)
RMPA2451-58
Part Number:
RMPA2451-58
Description:
Circuit Description = 2.4-2.5 GHZ GAAS Mmic Power Amplifier ;; Frequency = 2.4-2.5 GHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMPA2451-58.pdf (5 pages)
RMBA09500-58
Part Number:
RMBA09500-58
Description:
Circuit Description = Cellular 2 Watt Linear GAAS Mmic Power Amplifier ;; Frequency = 869-894 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMBA09500-58.pdf (5 pages)
RMBA09501A-58
Part Number:
RMBA09501A-58
Description:
Circuit Description = Cellular 2 Watt Linear GAAS Mmic Power Amplifier ;; Frequency = 869-894 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMBA09501A-58.pdf (4 pages)
RMBA19500A-58
Part Number:
RMBA19500A-58
Description:
Circuit Description = PCS1900 2 Watt GAAS Mmic Power Amplifier ;; Frequency = 1930-1990 MHZ
Manufacturer:
Raytheon RF Components
Datasheet:
RMBA19500A-58.pdf (6 pages)
RMPA25000
Part Number:
RMPA25000
Description:
23.5-26 GHz 2 Watt power amplifier MMIC
Manufacturer:
Raytheon RF Components

RMBA09501-58 Summary of contents

Page 1

... RMBA09501-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier The RMBA09501- highly linear Power Amplifier. The two stage circuit uses Raytheon RF Description Components’ pHEMT process designed for use as a driver stage for Cellular base stations the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation ...

Page 2

... Micro- and Pico-Cell base stations. Figure 1 shows the package outline and the pin designations. Figure 2 shows the functional block diagram of the packaged product. The RMBA09501-58 requires external passive components for DC bias and RF input and output matching circuits as shown in Figure 3 and the Parts List. A recommended schematic circuit is shown in Figure 3 ...

Page 3

... RMBA09501-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier Figure 3 Schematic of Application Circuit showing external components Figure 4 Layout of Test Evaluation Board (RMBA09501-58-TB, G657471) www.raytheonrf.com Specifications are based on most current or latest revision. Revised June 27, 2003 BA09501 HS (Heat-sink is attached under base of RMBA09501-58) Page 3 ...

Page 4

... RMBA09501-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE CORRESPONDING DRAIN VOLTAGES (Vdd) ARE PRESENT CAN DAMAGE THE AMPLIFIER. Test Procedure for the evaluation board (RMBA09501- The following sequence must be followed to properly test the amplifier. (It is necessary to add a fan to 58-TB) provide air cooling across the heat sink of RMBA09501 ...

Related keywords