2SJ243 NEC, 2SJ243 Datasheet

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2SJ243

Manufacturer Part Number
2SJ243
Description
P-CHANNEL MOS FET FOR SWITCHING
Manufacturer
NEC
Datasheet
1.2SJ243.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
2SJ243
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Document No. D11215EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
at 2.5 V.
because it is not necessary to consider the drive current, the
2SJ243 is ideal for driving the actuator of power-saving systems,
such as VCR cameras and headphone stereo systems.
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
FEATURES
• Small mounting area: about 60 % of the conventional mini-mold
• Can be directly driven by 3-V IC
• Can be automatically mounted
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
The 2SJ243 is a P-channel vertical type MOS FET that is driven
Because this MOS FET can be driven on a low voltage and
Moreover, the 2SJ243 is housed in a super small mini-mold
package (SC-70)
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
PARAMETER
SYMBOL
V
V
I
I
P
T
T
T
D(DC)
D(pulse)
P-CHANNEL MOS FET
DSS
GSS
T
ch
opt
stg
DATA SHEET
FOR SWITCHING
A
= 25 ˚C)
MOS FIELD EFFECT TRANSISTOR
V
V
PW
Duty cycle
3.0 cm
GS
DS
= 0
= 0
10 ms
2
0.64 mm, ceramic substrate used
TEST CONDITIONS
50 %
Gate protection
diode
PACKAGE DIMENSIONS (in mm)
Gate (G)
EQUIVALENT CIRCUIT
G
0.2
0.5
0.3 ± 0.05
1.6 ± 0.1
+0.1
–0
1.0
Source (S)
D
0.5
Drain (D)
–55 to +150
–55 to +80
S
RATING
2SJ243
–30
200
150
Internal diode
100
200
7
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: A1
0.75 ± 0.05
0.6
UNIT
mW
mA
mA
˚C
˚C
˚C
V
A
0 to 0.1
0.1
1996
+0.1
–0.05

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2SJ243 Summary of contents

Page 1

... The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-saving systems, such as VCR cameras and headphone stereo systems. ...

Page 2

ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Drain Cut-Off Current I DSS Gate Leakage Current I GSS Gate Cut-Off Voltage V GS(off) Forward Transfer Admittance |y Drain to Source On-State Resistance R Drain to Source On-State Resistance R Input Capacitance C Output ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Case Temperature - ˚C C TRANSFER CHARACTERISTICS –100 V = – ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 130 V Pulsed 100 75 ˚ ˚ 150 ˚ –0.5 –1 –3 – Drain Current - mA D SWITCHING CHARACTERISTICS 500 200 100 50 ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 2SJ243 M4 94.11 ...

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