2SJ245 Hitachi Semiconductor, 2SJ245 Datasheet

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2SJ245

Manufacturer Part Number
2SJ245
Description
SILICON P-CHANNEL MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ245
Manufacturer:
HITACHI/日立
Quantity:
20 000
Company:
Part Number:
2SJ245
Quantity:
55 000
Part Number:
2SJ245L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SJ245S
Manufacturer:
HIT/RENESAS
Quantity:
12 500
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DataSheet
4
U
.com
2SJ245
SILICON P-CHANNEL MOS FET
Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4 V Gate drive device can be driven
• Suitable for Switching regulator, DC – DC
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
———————————————————————————————————————————
Gate to source voltage
———————————————————————————————————————————
Drain current
———————————————————————————————————————————
Drain peak current
———————————————————————————————————————————
Body–drain diode reverse drain current
———————————————————————————————————————————
Channel dissipation
———————————————————————————————————————————
Channel temperature
———————————————————————————————————————————
Storage temperature
———————————————————————————————————————————
*
**
converter
from 5 V source
PW 10 µs, duty cycle 1 %
Value at Tc=25°C
L
, 2SJ245
DataSheet4U.com
Symbol
V
V
I
I
I
Pch**
Tch
Tstg
D
D(pulse)
DR
S
DSS
GSS
*
DPAK–1
Ratings
–60
±20
–5
–20
–5
20
150
–55 to +150
1
2
4
3
1
2, 4
3
Unit
V
V
A
A
A
W
°C
°C
1
2
3
4
1. Gate
2. Drain
3. Source
4. Drain

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2SJ245 Summary of contents

Page 1

... PW 10 µs, duty cycle Value at Tc=25°C DataSheet4U.com 4 DataSheet U .com , 2SJ245 L S DPAK–1 DataSheet4U.com Symbol V DSS V GSS ...

Page 2

... L , 2SJ245 S Table 2 Electrical Characteristics (Ta = 25°C) Item ———————————————————————————————————————————– ...

Page 3

... V –5 V –4 V Pulse test –3.5 V – –2 –4 –6 –8 –10 V (V) DS 2SJ245 L , 2SJ245 S Maximum Safe Operation Area Operation in this area is limited by R DS(on) 10 µs –30 –10 –3 – 25°C –0.3 –1 –3 –10 –30 Drain to Source Voltage ...

Page 4

... L , 2SJ245 S Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 –0.8 –0.6 –0.4 –0.2 Pulse test 0 –2 Gate to Source Voltage Static Drain to Source on State Resistance 1.0 Pulse test 0.8 0.6 V 0.4 0.2 0 –40 0 Case Temperature DataSheet4U.com 4 DataSheet U .com I = – –2 A –1 A –4 –6 – ...

Page 5

... V DD –25 V –50 V – – –8 –25 V –10 V – –16 – (nc) 2SJ245 L , 2SJ245 S Typical Capacitance vs. Drain to Source Voltage Ciss 500 Coss 200 100 Crss MHz 20 0 –10 –20 –30 –40 Drain to Source Voltage V ...

Page 6

... L , 2SJ245 S Reverse Drain Current vs. Source to Drain Voltage –5 –4 –3 –10 V –2 –5 V –1 0 –0.4 Source to Drain Voltage DataSheet4U.com 4 DataSheet U .com Pulse test –0.8 –1.2 –1.6 –2.0 V (V) SD DataSheet4U.com ...

Page 7

... Normalized Transient Thermal Impedance vs. Pulse Width 0.5 100 µ DataSheet4U.com Pulse Width Vout Vin Monitor D.U. Vout td(on) 2SJ245 L , 2SJ245 25°C ch – c( (t) • ch – – 6.25 °C/ ° 100 (S) 10% 90% ...

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