2SJ245 Hitachi Semiconductor, 2SJ245 Datasheet - Page 2
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2SJ245
Manufacturer Part Number
2SJ245
Description
SILICON P-CHANNEL MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet
1.2SJ245.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ245
Manufacturer:
HITACHI/日立
Quantity:
20 000
Company:
Part Number:
2SJ245L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Company:
Part Number:
2SJ245S
Manufacturer:
HIT/RENESAS
Quantity:
12 500
DataSheet4U.com
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DataSheet
4
U
.com
2SJ245 L , 2SJ245 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
———————————————————————————————————————————–
Drain to source breakdown
voltage
———————————————————————————————————————————–
Gate to source breakdown
voltage
———————————————————————————————————————————–
Gate to source leak current
———————————————————————————————————————————–
Zero gate voltage drain current
———————————————————————————————————————————–
Gate to source cutoff voltage
———————————————————————————————————————————–
Static drain to source on state
resistance
———————————————————————————————————————————–
Forward transfer admittance
———————————————————————————————————————————–
Input capacitance
————————————————————————————————
Output capacitance
————————————————————————————————
Reverse transfer capacitance
———————————————————————————————————————————–
Turn–on delay time
————————————————————————————————
Rise time
————————————————————————————————
Turn–off delay time
————————————————————————————————
Fall time
———————————————————————————————————————————–
Body–drain diode forward
voltage
———————————————————————————————————————————–
Body–drain diode reverse
recovery time
———————————————————————————————————————————–
Symbol
V
V
I
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
fs
|
DataSheet4U.com
Min
–60
±20
—
—
–1.0
—
————————————————————————–
—
2.2
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.2
0.28
3.7
610
315
95
12
45
170
90
–1.1
160
Max
—
—
±10
–100
–2.0
0.25
0.38
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1 MHz
I
V
R
I
I F = –5 A, V
diF / dt = 50 A / µs
D
G
D
D
D
D
D
F
GS
DS
GS
GS
DS
DS
GS
GS
L
= –5 A, V
= –10 mA, V
= –1 mA, V DS = –10 V
= –3 A
= –3 A
= –3 A
= –3 A
= ±100 µA, V
= 10
= ±16 V, V
= –50 V, V
= –10 V *
= –4 V *
= –10 V *
= –10 V
= 0
= –10 V
GS
GS
GS
GS
= 0
DS
= 0,
DS
= 0
= 0
= 0
= 0