2SJ245 Hitachi Semiconductor, 2SJ245 Datasheet - Page 2

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2SJ245

Manufacturer Part Number
2SJ245
Description
SILICON P-CHANNEL MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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DataSheet
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2SJ245 L , 2SJ245 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
———————————————————————————————————————————–
Drain to source breakdown
voltage
———————————————————————————————————————————–
Gate to source breakdown
voltage
———————————————————————————————————————————–
Gate to source leak current
———————————————————————————————————————————–
Zero gate voltage drain current
———————————————————————————————————————————–
Gate to source cutoff voltage
———————————————————————————————————————————–
Static drain to source on state
resistance
———————————————————————————————————————————–
Forward transfer admittance
———————————————————————————————————————————–
Input capacitance
————————————————————————————————
Output capacitance
————————————————————————————————
Reverse transfer capacitance
———————————————————————————————————————————–
Turn–on delay time
————————————————————————————————
Rise time
————————————————————————————————
Turn–off delay time
————————————————————————————————
Fall time
———————————————————————————————————————————–
Body–drain diode forward
voltage
———————————————————————————————————————————–
Body–drain diode reverse
recovery time
———————————————————————————————————————————–
Symbol
V
V
I
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
fs
|
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Min
–60
±20
–1.0
————————————————————————–
2.2
Typ
0.2
0.28
3.7
610
315
95
12
45
170
90
–1.1
160
Max
±10
–100
–2.0
0.25
0.38
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1 MHz
I
V
R
I
I F = –5 A, V
diF / dt = 50 A / µs
D
G
D
D
D
D
D
F
GS
DS
GS
GS
DS
DS
GS
GS
L
= –5 A, V
= –10 mA, V
= –1 mA, V DS = –10 V
= –3 A
= –3 A
= –3 A
= –3 A
= ±100 µA, V
= 10
= ±16 V, V
= –50 V, V
= –10 V *
= –4 V *
= –10 V *
= –10 V
= 0
= –10 V
GS
GS
GS
GS
= 0
DS
= 0,
DS
= 0
= 0
= 0
= 0

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