2SJ245 Hitachi Semiconductor, 2SJ245 Datasheet - Page 3

• Manufacturer Part Number: 2SJ245
• Description: SILICON P-CHANNEL MOS FET
• Manufacturer: Hitachi Semiconductor

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–10
20
10
30
–8
–6
–4
–2
0
0
–10 V
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc (°C)
–2
50
–6 V
–4
–5 V
V
–6
GS
100
–3.5 V
= –2.5 V
–3 V
V
–4 V
Pulse test
DS
–8
(V)
150
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–10
–100
–0.3
–0.1
–30
–10
–3
–1
–5
–4
–3
–2
–1
0
Operation in this area is
limited by R
Drain to Source Voltage
Pulse test
V
Gate to Source Voltage
Ta = 25°C
DS
Maximum Safe Operation Area
–0.3
Typical Transfer Characteristics
= –10 V
–1
Tc = –25°C
DS(on)
–1
–2
–3
–3
2SJ245 L , 2SJ245 S
–10
V
V
GS
10 µs
DS
–30
–4
25°C
75°C
(V)
(V)
–100
–5