K15N120 Infineon Technologies, K15N120 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
K15N120
Manufacturer Part Number
K15N120
Description
FAST IGBT IN NPT-TECHNOLOGY
Manufacturer
Infineon Technologies
Datasheet
1.K15N120.pdf
(13 pages)
www.DataSheet4U.com
Power Semiconductors
70A
60A
50A
40A
30A
20A
10A
200W
175W
150W
125W
100W
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
0A
75W
50W
25W
GE
j
0W
j
10Hz
= +15V/0V, R
25°C
150 C, D = 0.5, V
150 C)
f,
100Hz
T
SWITCHING FREQUENCY
50°C
C
,
I
c
CASE TEMPERATURE
G
T
T
= 33 )
C
C
=80°C
=110°C
75°C
1kHz
CE
= 800V,
100°C
10kHz
I
c
125°C
100kHz
4
100A
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
35A
30A
25A
20A
15A
10A
1A
5A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
C
10V
CASE TEMPERATURE
= 25 C, T
150 C)
75°C
SKW15N120
-
EMITTER VOLTAGE
100V
j
100°C
150 C)
Rev. 2_2
1000V
125°C
15 s
1ms
t
50 s
200 s
p
DC
=2 s
Sep 08