K15N120 Infineon Technologies, K15N120 Datasheet - Page 7

• Manufacturer Part Number: K15N120
• Description: FAST IGBT IN NPT-TECHNOLOGY
• Manufacturer: Infineon Technologies

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Power Semiconductors
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
14mJ
12mJ
10mJ
CE
4mJ
3mJ
2mJ
1mJ
0mJ
GE
8mJ
6mJ
4mJ
2mJ
0mJ
-50°C
= 800V, V
= +15V/0V, I
0A
*) E
due to diode recovery.
*) E
due to diode recovery.
T
j
I
,
on
on
10A
C
JUNCTION TEMPERATURE
,
and E
and E
0°C
COLLECTOR CURRENT
GE
C
= +15V/0V, R
j
CE
ts
ts
= 150 C,
= 15A, R
include losses
include losses
20A
= 800V,
50°C
30A
G
= 33 ,
100°C
G
= 3 3 ,
40A
150°C
E
E
E
ts
E
on
off
E
*
on
*
E
ts
*
*
off
50A
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
10
10
10
CE
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
-1
-2
-3
K/W
K/W
K/W
0
= 800V, V
p
1µs
/ T)
0.05
0.02
D=0.5
0.2
0.01
0.1
*) E
due to diode recovery.
on
10µs
single pulse
and E
R
GE
G
t
p
25
,
= +15V/0V, I
,
j
GATE RESISTOR
ts
= 150 C,
100µs
PULSE WIDTH
include losses
SKW15N120
R
0.09751
0.29508
0.13241
0.10485
R , ( K / W )
1ms
1
C
1
=
C
50
1
Rev. 2_2
/R
= 15A,
10ms 100ms
1
C
0.67774
0.11191
0.00656
0.00069
2
=
, ( s )
2
/R
E
E
R
2
E
Sep 08
on
ts
75
2
off
*
*
1s