RN49A6FS TOSHIBA Semiconductor CORPORATION, RN49A6FS Datasheet - Page 2

• Manufacturer Part Number: RN49A6FS
• Description: Toshiba Transistor Silicon Npn?pnp Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Absolute Maximum Ratings
Absolute Maximum Ratings
Absolute Maximum Ratings
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note1: Total rating
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Characteristics
Characteristics
(Ta = 25°C) (Q1)
(Ta = 25°C) (Q2)
(Ta = 25°C) (Q1, Q2 common)
P
Symbol
Symbol
Symbol
V
V
V
V
V
V
C
T
CBO
CEO
EBO
CBO
CEO
EBO
I
I
T
stg
C
C
(Note1)
j
−55 to 150
Rating
Rating
Rating
−20
−20
−50
150
20
20
10
50
−5
50
2
Unit
Unit
Unit
mW
mA
mA
°C
°C
V
V
V
V
V
V
RN49A6FS
2009-04-23