RN49A6FS TOSHIBA Semiconductor CORPORATION, RN49A6FS Datasheet - Page 3

• Manufacturer Part Number: RN49A6FS
• Description: Toshiba Transistor Silicon Npn?pnp Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Input resistor
Resistor ratio
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Input resistor
Resistor ratio
Characteristics
Characteristics
(Ta = 25°C) (Q1)
(Ta =25°C) (Q2)
V
V
V
V
Symbol
Symbol
V
V
R1/R2
R1/R2
CE (sat)
CE (sat)
I
I
I
I (OFF)
I
I
I
I (OFF)
I (ON)
C
I (ON)
C
CBO
CEO
EBO
h
CBO
CEO
EBO
h
R1
R1
FE
FE
ob
ob
V
V
V
V
I
V
V
V
V
V
V
V
I
V
V
V
C
C
CB
CE
EB
CE
CE
CE
CB
CB
CE
EB
CE
CE
CE
CB
= 5 mA, I
= −5 mA, I
3
= 20 V, I
= 20 V, I
= 10 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= −20 V, I
= −20 V, I
= −5 V, I
= −5 V, I
= −0.2 V, I
= −5 V, I
= −10 V, I
Test Condition
Test Condition
B
C
C
B
C
C
E
B
E
C
C
= 0.25 mA
C
= 10 mA
= 0.1 mA
E
B
E
= −0.25 mA
= 0
= 0
= 0
= 0, f = 1 MHz
= 0
C
= −10 mA
= −0.1 mA
= 5 mA
= 0
= 0
= 0, f = 1 MHz
―
―
⎯
⎯
= −5 mA
0.088
−0.08
37.6
−0.6
−0.4
3.76
0.08
Min
120
Min
120
1.2
0.8
0.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
1.0
1.2
1.2
4.7
0.1
47
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
RN49A6FS
−0.121
2009-04-23
0.133
−0.15
−100
−500
56.4
0.15
−1.2
−0.8
5.64
0.12
Max
Max
100
500
1.2
3.6
1.5
⎯
⎯
⎯
⎯
Unit
Unit
mA
mA
kΩ
nA
pF
kΩ
nA
pF
―
―
V
V
V
V
V
V