MMFT1N10 Motorola, MMFT1N10 Datasheet - Page 3

• Manufacturer Part Number: MMFT1N10
• Description: MEDIUM POWER TMOS FET 1 AMP 100 VOLTS
• Manufacturer: Motorola

Motorola TMOS Power MOSFET Transistor Device Data
0.5
0.4
0.3
0.2
0.1
10
8
6
4
2
0
4
3
2
1
0
0
0
0
4
9 V
10 V
Figure 1. On Region Characteristics
Figure 3. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
6
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance versus
2
2
Gate–to–Source Voltage
8 V
8
4
4
10
T J = – 55 C
6
6
12
T J = 25 C
I D = 1 A
25 C
100 C
8
8
14
V DS = 10 V
V GS = 4 V
T J = 25 C
7 V
5 V
6 V
10
16
10
1.2
1.1
1.0
0.9
0.8
0.7
0.5
0.4
0.3
0.2
0.1
0.5
0.4
0.3
0.2
0.1
0
0
– 50
– 50
0
Figure 4. On–Resistance versus Drain Current
V GS = 10 V
Figure 6. On–Resistance versus Junction
Figure 2. Gate–Threshold Voltage Variation
T J , JUNCTION TEMPERATURE ( C)
0
0
I D , DRAIN CURRENT (AMPS)
T J , JUNCTION TEMP ( C)
With Temperature
Temperature
T J = 100 C
50
50
2
– 55 C
25 C
MMFT1N10E
100
100
V GS = 10 V
I D = 1 A
V DS = V GS
I D = 1.0 mA
3
150
150
4