TPC8110 Toshiba Semiconductor, TPC8110 Datasheet
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TPC8110
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TPC8110 Summary of contents
Page 1
... V V DGR ± GSS − − − 0. 150 °C ch −55 to 150 T °C stg 1 TPC8110 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 2002-05-24 ...
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... January to December are denoted by letters respectively.) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm Ω TPC8110 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) = −8 A 2002-05-24 ...
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... GS = − gs1 25°C) Symbol Test Condition I DRP = − DSF TPC8110 Min Typ. Max = 0 V ± − −40 −25 −0.8 −2.0 ...
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... Gate-source voltage V 1000 Common source Ta = 25°C 500 Pulse test 300 25 100 −30 −50 −0.1 −0.3 −0.5 4 TPC8110 I – Common source −5 − 25°C Pulse test −3.75 −3.25 −3.5 −3.0 −2.75 −2 −2.25 V −2 −3 −4 − ...
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... C oss C rss −0.4 0 −80 −40 −30 −50 Dynamic Input/Output Characteristics − −30 −20 −10 0 150 175 0 5 TPC8110 I – −5 −3 − Common source Ta = 25°C Pulse test 0.4 0.8 1.2 1.6 Drain-source voltage V ( – Common source − ...
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... Single pulse Ta = 25°C −0.3 Curves must be derated linearly with increase in temperature. V DSS max −0.1 −0.1 −1 −10 Drain-source voltage V (V) DS − 0 Pulse width t (s) w −100 6 TPC8110 (2) (1) Single pulse 100 1000 2002-05-24 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 TPC8110 000707EAA 2002-05-24 ...