TPC8110 Toshiba Semiconductor, TPC8110 Datasheet - Page 6
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TPC8110
Manufacturer Part Number
TPC8110
Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Manufacturer
Toshiba Semiconductor
Datasheet
1.TPC8110.pdf
(7 pages)
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−100
−0.5
−0.3
−0.1
−50
−30
−10
−5
−3
−1
−0.1
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
I D max (pulse)*
Drain-source voltage V
1000
Safe Operating Area
100
0.1
10
0.001
−1
1
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
t = 10 s
board (a) (Note 2a)
board (b) (Note 2b)
10 ms*
0.01
V DSS max
−10
DS
1 ms*
(V)
0.1
−100
Pulse width t
r
th
6
− t
1
w
w
(s)
10
100
Single pulse
(2)
(1)
1000
2002-05-24
TPC8110