GT8G131 Toshiba Semiconductor, GT8G131 Datasheet - Page 2

• Manufacturer Part Number: GT8G131
• Description: N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Marking
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Thermal resistance
Note 2: Drive operation: Mount on glass epoxy board [1 inch
GT8G131
Characteristics
※
● on lower left of the marking indicates Pin 1.
※
Rise time
Turn-on time
Fall time
Turn-off time
Weekly code: (Three digits)
Type
Lot No.
(Note 2)
Week of manufacture (01 for first week of year, continues up to 52 or 53)
Year of manufacture (One low-order digits of calendar year)
(Ta = = = = 25°C)
V
V
Symbol
R
GE (OFF)
CE (sat)
I
I
C
th (j-a)
GES
CES
t
t
on
off
t
t
ies
r
f
V
V
I
I
V
C
C
GE
CE
CE
4 V
= 1 mA, V
= 150 A, V
0
V
Duty cycle < = 1%
= ±6 V, V
= 400 V, V
= 10 V, V
IN
2
: t
t
r
f
< = 100 ns
< = 100 ns
Test Condition
CE
2
GE
GE
CE
´ 1.5 t]
GE
= 5 V
= 4 V
= 0
= 0, f = 1 MHz
51 W
¾
= 0
300 V
Min
0.6
¾
¾
¾
¾
¾
¾
¾
¾
¾
3800
Typ.
3.0
1.5
1.7
1.9
2.4
¾
¾
¾
¾
GT8G131
2003-03-18
Max
±10
114
1.5
7.0
10
¾
¾
¾
¾
¾
°C/W
Unit
mA
mA
pF
ms
V
V