GT8G131 Toshiba Semiconductor, GT8G131 Datasheet - Page 3

• Manufacturer Part Number: GT8G131
• Description: N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
• Manufacturer: Toshiba Semiconductor

200
160
120
200
160
120
200
160
120
80
40
80
40
80
40
0
0
0
0
0
0
Common emitter
Tc = -40°C
Common emitter
Tc = 70°C
Common emitter
V CE = 5 V
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
Gate-emitter voltage V
1
1
1
V GE = 5 V
V GE = 5 V
-40°C
2
2
2
I
I
I
C
C
C
4.5 V
– V
– V
– V
25°C
GE
CE
CE
4.5 V
3
3
3
3.5 V
GE
Tc = 125°C
2.5 V
3.0 V
(V)
70°C
4
4
4
4.0 V
4.0 V
3.5 V
3.0 V
2.5 V
5
5
5
3
200
160
120
200
160
120
80
40
80
40
0
0
5
4
3
2
1
0
-80
0
0
Common emitter
Tc = 25°C
Common emitter
Tc = 125°C
Common emitter
V GE = 4 V
-40
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
1
1
Case temperature Tc (°C)
V GE = 5 V
0
V
V GE = 5 V
CE (sat)
2
2
I
I
C
C
– V
– V
4.5 V
40
CE
CE
– Tc
4.5 V
3
3
80
2.5 V
3.5 V
3.0 V
I C = 150 A
4.0 V
4
4
120
2.5 V
4.0 V
3.5 V
3.0 V
120 A
GT8G131
2003-03-18
90 A
60 A
160
5
5