GT60M322 Toshiba, GT60M322 Datasheet - Page 2

• Manufacturer Part Number: GT60M322
• Description: Silicon N Channel IGBT
• Manufacturer: Toshiba

Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Diode forward voltage
Reverse recovery time
Note 1: Switching time measurement circuit and input/output waveforms
0
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
R
G
V
(Ta = 25°C)
CC
R
L
V
V
Symbol
GE (OFF)
CE (sat)
I
I
C
GES
CES
t
t
V
t
t
on
off
ies
t
rr
r
f
F
0
0
V
V
I
I
V
Resistive Load
V
V
I
I
C
C
F
F
GE
CE
CE
CC
GG
= 25 A, V
= 25 A, di/dt = −200 A/µs
= 60 mA, V
= 60 A, V
V
V
I
GE
CE
C
= ±25 V, V
= 950 V, V
= 10 V, V
= 600 V, I
= ±15 V, R
2
t
GE
90%
d (off)
GE
Test Condition
CE
GE
C
= 0
GE
= 15 V
CE
G
= 60 A
= 5 V
= 0, f = 1 MHz
= 30 Ω
= 0
= 0
t
90%
off
t
f
10%
(Note 1)
10%
10%
Min
6.0
―
―
―
―
―
―
―
―
―
―
t
on
t
6800
r
Typ.
0.42
0.62
0.15
0.39
2.3
―
―
―
―
―
90%
GT60M322
2004-07-06
±500
0.21
Max
0.35
1.0
9.0
2.7
3.0
―
―
―
―
Unit
mA
nA
pF
µs
µs
V
V
V