GT60M322 Toshiba, GT60M322 Datasheet - Page 5

• Manufacturer Part Number: GT60M322
• Description: Silicon N Channel IGBT
• Manufacturer: Toshiba

0.01
10
10
10
10
10
0.1
− 1
− 2
10
1
2
1
0
0
−4
t rr
I rr
10
5
− 3
Forward current I F (A)
Pulse width t w (s)
10
10
− 2
R
t
rr
th (t)
, I
10
15
rr
− 1
– I
– t
F
w
Common Collector
di/dt = −200 A/µs
10
20
0
: Tc = 25°C
: Tc = 125°C
Diode stage
IGBT stage
Tc = 25°C
10
25
1
10
30
100
10
1
2
5
50
40
30
20
10
0
0
Tc = 125°C
1
Forward voltage V F (V)
25
2
−40
I
F
– V
F
3
Common
collector
4
GT60M322
2004-07-06
5