SSM6J08FU Toshiba Semiconductor, SSM6J08FU Datasheet - Page 4
SSM6J08FU
Manufacturer Part Number
SSM6J08FU
Description
Power Management Switch
Manufacturer
Toshiba Semiconductor
Datasheets
1.SSM6J08FU.pdf
(6 pages)
2.SSM6J08FU.pdf
(6 pages)
3.SSM6J08FU.pdf
(6 pages)
4.SSM6J08FU.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SSM6J08FU
Manufacturer:
TOSHIBA
Quantity:
51 000
Part Number:
SSM6J08FU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
1000
-1.0
-0.8
-0.6
-0.4
-0.2
100
-10
10
-8
-6
-4
-2
-0.01
-25
0
1
0
0
Common Source
I D = -1.3 A
Ta = 25°C
t on
t r
0
Ambient temperature Ta (°C)
2
Total gate charge Q g (nC)
Dynamic Input Characteristic
25
Drain current I D (A)
-0.1
t f
50
V
4
t – I
th
– Ta
t off
D
75
-10 V
-1
Common Source
V DD = -10 V
V GS = 0~-2.5 V
Ta = 25°C
R G = 4.7 W
6
Common Source
V DS = -3 V
I D = -0.1 mA
100
V DD = -16 V
125
8
150
-10
4
-0.01
-2.0
-1.5
-1.0
-0.5
-0.1
600
500
400
300
200
100
-10
-1
-0.1
0
0
0
0
I D max (continuous)
*: Single nonrepetitive
I D max (pulsed)
DC operation
Common Source
V GS = 0
Ta = 25°C
Ta = 25°C
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
G
Drain-Source voltage V DS (V)
-4
Drain-Source voltage V
Drain-Source voltage V
Safe operating area
D
S
-1
I
-8
I
DR
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´1.6 t
Cu pad: 0.32 mm
DR
C – V
C oss
C rss
100 ms*
C iss
0.5
– V
DS
DS
-12
10 ms*
-10
Common Source
V GS = 0
f = 1 MHz
Ta = 25°C
DS
DS
2
´ 6) Fig: 1
(V)
(V)
SSM6J08FU
-16
V DSS max
2003-02-19
-100
-20
1