BUK456-200 Philips Semiconductors, BUK456-200 Datasheet
BUK456-200
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BUK456-200 Summary of contents
Page 1
... PIN CONFIGURATION tab CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product Specification BUK456-200A/B MAX. MAX. UNIT -200A -200B 200 200 19 17 150 150 175 175 0.16 0.2 SYMBOL MAX. UNIT - 200 V - 200 V - ...
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... Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad CONDITIONS - - -dI /dt = 100 Product Specification BUK456-200A/B MIN. TYP. MAX. UNIT 200 - - V 2.1 3.0 4 0.1 1 100 ...
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... Fig.4. Transient thermal impedance f(t); parameter j- BUK456-200A VGS / VDS / f(V ); parameter BUK456-200A RDS(ON) / Ohm 4.5 5 VGS / 5 ˚ f(I ); parameter V DS(ON 1E+ ˚ Rev 1.100 ...
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... 10000 1000 100 10 100 140 180 Fig.12. Typical capacitances f Product Specification BUK456-200A/B VGS(TO max. typ. min. - 100 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA SUB-THRESHOLD CONDUCTION 2 % typ ...
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... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions parameter April 1993 BUK456-200 VDS / V =40 30 160 Fig.14. Typical reverse diode current f Product Specification BUK456-200A/B BUK456-200A 150 25 1 VSDS / V ); conditions parameter T SDS GS Rev 1.100 2 j ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.15. TO220AB; pin 2 connected to mounting base. 6 Product Specification BUK456-200A/B 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.100 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1993 7 Product Specification BUK456-200A/B Rev 1.100 ...