BUK456-60H Philips Semiconductors, BUK456-60H Datasheet
BUK456-60H
Related parts for BUK456-60H
BUK456-60H Summary of contents
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... Drain-source on-state DS(ON) resistance PIN CONFIGURATION tab CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS - - 1 Product Specification BUK456-60H MAX. UNIT 150 W 175 ˚ SYMBOL MAX. UNIT - ...
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... CONDITIONS - - -dI /dt = 100 CONDITIONS Product Specification BUK456-60H MIN. TYP. MAX. UNIT 2.1 3.0 4 0.1 1 100 MIN. TYP. MAX. ...
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... Fig.4. Transient thermal impedance f(t); parameter j- BUK456-60H VGS / VDS / f(V ); parameter RDS(ON) / Ohm BUK456-60H 0.1 4.5 5 5.5 6 6.5 VGS / f(I ); parameter V DS(ON 1E+01 7 6.5 6 5 ˚ 100 = 25 ˚ ...
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... Fig.10. Gate threshold voltage. = f(T ); conditions mA SUB-THRESHOLD CONDUCTION 2 % typ VGS / V Fig.11. Sub-threshold drain current. = f(V ; conditions ˚ BUK456-60H VDS / iss oss ); conditions MHz DS GS 180 = Ciss Coss Crss , C . ...
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... Fig.15. Normalised avalanche energy rating. DS BUK456-60H 150 VGS 0 1 1.5 Fig.16. Avalanche energy test circuit Product Specification BUK456-60H WDSS 100 120 140 160 Tmb / f(T ); conditions DSS VDS - T.U. RGS shunt ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". May 1993 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.17. TO220AB; pin 2 connected to mounting base. 6 Product Specification BUK456-60H 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.100 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1993 7 Product Specification BUK456-60H Rev 1.100 ...