BUK456-200 Philips Semiconductors, BUK456-200 Datasheet - Page 3

• Manufacturer Part Number: BUK456-200
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
April 1993
PowerMOS transistor
ID% = 100 I
I
120
110
100
Fig.2. Normalised continuous drain current.
D
120
110
100
100
90
80
70
60
50
40
30
20
10
0.1
90
80
70
60
50
40
30
20
10
10
0
& I
0
1
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
1
DM
ID / A
= f(V
20
PD% = 100 P
20
D
/I
D 25 ˚C
40
40
DS
10
); I
60
60
= f(T
DM
DC
single pulse; parameter t
80
80
Tmb / C
Tmb / C
mb
D
VDS / V
/P
); conditions: V
100
Normalised Current Derating
B
D 25 ˚C
100
100
Normalised Power Derating
A
1 ms
10 ms
100 ms
100 us
tp = 10 us
120
120
= f(T
1000
mb
BUK456-200A,B
140
140
mb
= 25 ˚C
)
160
160
GS
180
180
10 V
p
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
0.001
1.0
0.8
0.6
0.4
0.2
40
30
20
10
0.01
0
0.1
0
10
1
0
ID / A
0
Fig.4. Transient thermal impedance.
RDS(ON) / Ohm
Zth j-mb / (K/W)
D =
0.05
0.02
4
Z
0.5
0.2
0.1
2
R
0
th j-mb
I
DS(ON)
D
4
= f(V
1E-05
4.5
= f(t); parameter D = t
10
6
= f(I
DS
10
); parameter V
8
D
); parameter V
VDS / V
5
1E-03
ID / A
t / s
10
20
20
P
D
BUK456-200A/B
12
VGS / V =
Product Specification
t
p
14
T
5.5
1E-01
VGS / V =
30
GS
BUK456-200A
BUK456-200A
7
D =
16
GS
p
BUKx56-lv
/T
j
t
T
p
j
t
= 25 ˚C .
= 25 ˚C .
18
Rev 1.100
6
1E+01
10
6
5
4
7
20
40