BUK456-60H Philips Semiconductors, BUK456-60H Datasheet - Page 5

• Manufacturer Part Number: BUK456-60H
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
May 1993
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
I
F
GS
15
10
= f(V
5
0
= f(Q
100
Fig.14. Typical reverse diode current.
80
60
40
20
0
VGS / V
0
SDS
0
IS / A
G
); conditions: I
); conditions: V
20
0.5
QG / nC
VSDS / V
D
40
Tj / C = 25
GS
= 50 A; parameter V
= 0 V; parameter T
VDS / V =12
1
BUK456-60H
60
BUK456-60H
150
48
1.5
80
DS
j
5
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
DSS
DSS
40
% = f(T
RGS
0.5 LI
60
mb
80
); conditions: I
D
2
BV
Tmb / C
100
DSS
L
VDS
120
BV
T.U.T.
Product Specification
DSS
BUK456-60H
140
D
shunt
= 50 A
R 01
V
DD
160
-
+
Rev 1.100
-ID/100
180
VDD