HAT1055RJ Renesas Technology, HAT1055RJ Datasheet - Page 3

• Manufacturer Part Number: HAT1055RJ
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1055R, HAT1055RJ
Electrical Characteristics
(Ta = 25 C)
Item
Drain to source breakdown
voltage
Gate to Source breakdown voltage V
Zero gate voltage drain current
Zero gate voltage
drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Notes: 5. Pulse test
Rev.1.00, Aug.29.2003, page 3 of 9
HAT1055R
HAT1055RJ I
Symbol Min
V
I
I
I
V
|y
R
R
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
V
trr
DSS
DSS
DSS
GSS
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
–60
—
—
—
—
–1.0
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
20
—
—
—
—
—
—
—
5
60
90
1350
135
85
21
4
20
15
10
–0.85
25
Typ
3
55
Max
—
—
–1
—
–10
–2.5
—
76
130
—
—
—
—
—
—
—
—
—
—
–1.10
—
10
Unit
V
V
V
S
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
A
A
A
A
Test Conditions
I
I
V
V
Ta = 125 C
V
V
I
I
I
V
f = 1 MHz
V
V
I
V
V
R
R
I
I
diF/dt = 100 A/µs
D
G
D
D
D
D
F
F
DS
DS
GS
DS
DS
DD
GS
GS
DD
L
G
= –5 A, V
= –5 A, V
= –10 mA, V
= –2.5 A
= –2.5 A
= –2.5 A
= –5 A
= 100 A, V
= 12
= 4.7
= –60 V, V
= –48 V, V
= –10 V, I
= –10 V, V
= –25 V
= 16 V, V
= –10 V
= –10 V, I
–30 V
Note5
Note5
Note5
GS
GS
D
D
= 0
= 0
GS
GS
GS
DS
, V
, V
, V
GS
= –2.5 A
DS
= –1 mA
Note5
= 0
= 0
= 0
= 0
DS
GS
GS
= 0
= 0
= –10 V
= –10 V
= –4.5 V