HAT1055RJ Renesas Technology, HAT1055RJ Datasheet - Page 8

• Manufacturer Part Number: HAT1055RJ
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 8 of 9
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
10
10
10
1
1
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D = 1
D = 1
0.5
100
100
1 m
1 m
10 m
10 m
Pulse Width PW (S)
Pulse Width PW (S)
100 m
100 m
1
1
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
P
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
P
ch - f(t) = s (t) x ch - f
ch - f = 125 C/W, Ta = 25 C
DM
ch - f(t) = s (t) x ch - f
ch - f = 166 C/W, Ta = 25 C
DM
10
10
PW
T
PW
T
100
100
D =
1000
1000
D =
PW
PW
T
T
10000
10000