HAT1055RJ Renesas Technology, HAT1055RJ Datasheet - Page 5

• Manufacturer Part Number: HAT1055RJ
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 5 of 9
–0.8
–0.6
–0.4
–0.2
0.25
0.20
0.15
0.10
0.05
–40
–1
0
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
Pulse Test
V
Gate to Source Voltage
GS
Case Temperature
–10 V
–4
0
Gate to Source Voltage
= –4.5 V
vs. Temperature
–8
40
I
D
–12
80
= –1, –2 A
I
Tc
D
Pulse Test
–1, –2 A
= –5 A
–2 A
–16
120
V
( C)
GS
–5 A
–5 A
–1 A
(V)
–20
160
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0.5
50
20
10
Static Drain to Source on State Resistance
–0.1 –0.3
5
2
1
–1
V
Tc = –25 C
Forward Transfer Admittance vs.
GS
Drain Current I
–10 V
–3
= –4.5 V
Drain Current I
vs. Drain Current
–1
Drain Current
–10
–3
75 C
25 C
D
–10
V
Pulse Test
D
(A)
DS
–30
Pulse Test
(A)
= –10 V
–30
–100
–100