HAT2064R Hitachi Semiconductor, HAT2064R Datasheet - Page 3

• Manufacturer Part Number: HAT2064R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain
current
Gate to source cutoff voltage V
Static drain to source on state R
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Note:
3. Pulse test
Symbol
V
V
I
I
R
|y
Ciss
Coss
Qg
Qgs
Qgd
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
Min
30
—
—
1.0
—
—
18
—
—
—
—
—
—
—
—
—
—
—
—
20
Typ
—
—
—
—
—
5.0
7.0
30
2200
600
330
40
6
8
20
35
60
16
0.9
50
Max
—
—
1
2.5
6.3
10
—
—
—
—
—
—
—
—
—
—
—
1.17
—
10
Unit
V
V
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
V
R
R
IF = 16 A, V
IF = 16 A, V
diF/ dt = 50 A/ s
D
G
D
D
D
D
GS
DS
DS
DS
GS
DD
GS
GS
DD
L
g
= 10 mA, V
= 100 A, V
= 8 A, V
= 8 A, V
= 8 A, V
= 16 A
= 1.25
= 4.7
= 30 V, V
= 10 V, I
= 10 V
= 16 V, V
= 0
= 10 V
= 10 V
= 10 V, I
10 V
HAT2064R
GS
GS
DS
GS
GS
D
= 10 V
= 10 V
= 4.5 V
GS
D
GS
= 8 A
= 0
= 0
DS
= 1 mA
DS
= 0
= 0
= 0
= 0
Note3
Note3
Note3
Note3
3