HAT2064R Hitachi Semiconductor, HAT2064R Datasheet - Page 5

• Manufacturer Part Number: HAT2064R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Hitachi Semiconductor

0.20
0.16
0.12
0.08
0.04
-40
20
16
12
0
8
4
0
Static Drain to Source on State Resistance
Drain to Source Saturation Voltage vs.
Pulse Test
Gate to Source Voltage
V
GS
Case Temperature
4
0
10 V
Gate to Source Voltage
= 4.5 V
vs. Temperature
40
8
I
D
= 2 A, 5 A, 10 A
12
80
2 A, 5 A, 10 A
I
D
Tc
Pulse Test
= 10 A
V
120
16
5 A
2 A
GS
(˚C)
(V)
160
20
100
100
0.3
0.1
50
20
10
30
10
5
2
1
3
1
Static Drain to Source on State Resistance
0.1
0.1
Pulse Test
0.2
Forward Transfer Admittance vs.
0.3
0.5
Drain Current
Tc = -25 ˚C
Drain Current I
vs. Drain Current
1
1
Drain Current
25 ˚C
2
V
3
GS
5
10 V
= 4.5 V
75 ˚C
10
I
10
V
Pulse Test
HAT2064R
D
D
DS
20
(A)
(A)
= 10 V
30
50
100
100
5