HAT2064R Hitachi Semiconductor, HAT2064R Datasheet - Page 4

• Manufacturer Part Number: HAT2064R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Hitachi Semiconductor

HAT2064R
Main Characteristics
4
4.0
3.0
2.0
1.0
50
40
30
20
10
0
0
Test Condition :
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Ambient Temperature
Typical Output Characteristics
10V
4.5 V
2
50
4
3.5 V
100
6
3 V
Pulse Test
150
V
Ta (˚C)
DS
8
(V)
200
10
0.01
500
100
0.1
10
50
40
30
20
10
1
0.1
0
Note 4 :
Operation in
this area is
limited by R
Ta = 25 ˚C
1 shot Pulse
Drain to Source Voltage
Gate to Source Voltage
V
Pulse Test
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
0.3
1
= 10 V
Tc = 75˚C
1
DS(on)
2
3
3
10
-25˚C
10 s
25˚C
V
V
GS
DS
4
30
(V)
(V)
100
5