HAT2099H Renesas Technology, HAT2099H Datasheet - Page 2

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HAT2099H

Manufacturer Part Number
HAT2099H
Description
Silicon N Channel Power MOS FET Power Switching
Manufacturer
Renesas Technology
Datasheet
www.DataSheet4U.com
HAT2099H
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.5.00 Sep 07, 2005 page 2 of 7
2. Tc = 25 C
3. Value at Tch = 25 C, Rg
4. Pulse test
10 s, duty cycle
Item
Item
1%
50
V
V
Symbol
V
R
R
Coss
(BR) DSS
(BR) GSS
Crss
Ciss
t
t
Qgs
Qgd
I
I
GS (off)
DS (on)
DS (on)
|y
V
d (on)
d (off)
Qg
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
E
Symbol
I
AP
AR
V
V
Tstg
Tch
I
Min
DSS
GSS
I
DR
Note 3
1.0
D
30
39
Note 3
Note 2
20
Note 1
4750
1180
0.85
Typ
650
2.9
5.0
65
75
16
14
26
60
85
26
60
Max
0.98
2.5
3.7
7.3
10
1
–55 to +150
Value
200
150
2.5
30
50
50
30
20
5
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
V
R
Rg = 4.7
I
I
di
D
G
D
D
D
D
F
F
GS
DS
DS
DS
GS
DD
GS
GS
DD
L
F
= 50 A, V
= 50 A, V
= 10 mA, V
= 25 A, V
= 25 A, V
= 25 A, V
= 50 A
= 100 A, V
/dt = 50 A/ s
= 0.4
= 16 V, V
= 30 V, V
= 10 V, I
= 10 V
= 0
= 10 V
= 10 V
= 10 V, I
Test Conditions
10 V
GS
GS
GS
GS
DS
D
D
GS
GS
= 0
= 0
= 1 mA
= 10 V
= 4.5 V
= 10 V
= 25 A
Unit
DS
mJ
DS
(Ta = 25 C)
(Ta = 25 C)
W
V
V
A
A
A
A
= 0
= 0
C
C
= 0
= 0
Note 4
Note 4
Note 4
Note 4

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