HAT2099H Renesas Technology, HAT2099H Datasheet - Page 3

• Manufacturer Part Number: HAT2099H
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

www.DataSheet4U.com
HAT2099H
Main Characteristics
Rev.5.00 Sep 07, 2005 page 3 of 7
0.20
0.16
0.12
0.08
0.04
40
30
20
10
0
50
40
30
20
10
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
4.5 V
10 V
Gate to Source Voltage
4
2
50
3.5 V
4
8
100
12
6
I
D
= 20 A
10 A
5 A
Tc (°C)
Pulse Test
150
Pulse Test
V
V
GS
V
16
8
GS
DS
= 3 V
(V)
(V)
200
20
10
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
50
40
30
20
10
50
20
10
1
0
5
2
1
0.1
0.1
0
Drain to Source Voltage
Gate to Source Voltage
Pulse Test
Operation in
this area is
limited by R
Tc = 25°C
1 shot Pulse
Typical Transfer Characteristics
0.2
Maximum Safe Operation Area
V
Pulse Test
DS
0.3
= 10 V
1
Drain Current
0.5
Tc = 75°C
vs. Drain Current
1
1
DS (on)
V
GS
2
10 V
2
= 4.5 V
3
5
3
10
10
I
D
25°C
–25°C
(A)
20
V
V
GS
4
30
DS
50
(V)
(V)
100
100
5