HAT2099H Renesas Technology, HAT2099H Datasheet - Page 4

• Manufacturer Part Number: HAT2099H
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT2099H
Rev.5.00 Sep 07, 2005 page 4 of 7
1000
500
200
100
Static Drain to Source on State Resistance
20
16
12
50
40
30
20
10
50
20
10
0
8
4
0
–40
0.1
0
V
Reverse Drain Current
Pulse Test
I
D
DS
V
Case Temperature
Dynamic Input Characteristics
GS
= 50 A
0.3
Body-Drain Diode Reverse
Gate Charge
40
= 4.5 V
0
vs. Temperature
10 V
Recovery Time
1
40
80
V
DD
I
D
V
di / dt = 50 A / µs
V
3
= 5 A, 10 A
GS
= 25 V
GS
10 V
120
80
5 V
5 A, 10 A, 20 A
= 0, Ta = 25°C
Qg (nc)
10
V
Tc
DD
I
160
DR
= 25 V
120
30
10 V
(
20 A
°
5 V
C)
(A)
160
100
200
20
16
12
8
4
0
10000
3000
1000
500
200
100
100
300
100
0.3
0.1
30
10
30
10
50
20
10
3
1
5
0.1
0.1 0.2
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
t f
0.3
Switching Characteristics
Drain to Source Voltage
10
Typical Capacitance vs.
Drain Current
Drain Current I
0.5
Tc = –25°C
Drain Current
1
1
20
t d(on)
V
Rg = 4.7 µs, duty ≤ 1 %
25°C
Ciss
Coss
Crss
2
GS
t d(off)
3
= 10 V, V
5
30
10
I
10
D
75°C
D
V
Pulse Test
DS
V
f = 1 MHz
(A)
DS
20
GS
(A)
= 10 V
40
t r
30
DS
= 10 V
= 0
50
(V)
100
100
50