UPA1730 NEC, UPA1730 Datasheet
UPA1730
Manufacturer Part Number
UPA1730
Description
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet
1.UPA1730.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPA1730G-E1
Manufacturer:
NEC
Quantity:
20 000
Part Number:
UPA1730TP-E1
Manufacturer:
NEC
Quantity:
20 000
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
tor designed for power management applications of
notebook computers and Li-ion battery protection circuit.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW
The
Low on-resistance
R
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
PA1730 is P-Channel MOS Field Effect Transis-
iss
G14284EJ1V0DS00 (1st edition)
November 1999 NS CP(K)
PA1730G
= 9.5 m
= 13.5 m
= 15.0 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
iss
= 3800 pF TYP.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
Note1
DS
A
GS
= 25°C)
GS
= 0 V)
GS
GS
= 0 V)
= –10 V, I
= –4.5 V, I
= –4.0 V, I
P-CHANNEL POWER MOS FET
Power SOP8
PACKAGE
Note2
1 %
D
A
The mark
= –6.5 A)
D
D
= 25°C, All terminals are connected.)
INDUSTRIAL USE
I
= –6.5 A)
= –6.5 A)
I
D(pulse)
V
V
D(DC)
T
T
P
DSS
GSS
stg
DATA SHEET
ch
T
SWITCHING
2
–55 to +150
shows major revised points.
x 2.2 mm
# 13.0
# 52.0
#
MOS FIELD EFFECT TRANSISTOR
–30
150
2.2
20
°C
°C
W
8
1
V
V
A
A
PACKAGE DRAWING (Unit : mm)
5.37 MAX.
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1,2,3
4
5,6,7,8
0.5 ±0.2
©
6.0 ±0.3
PA1730
4.4
; Source
; Gate
; Drain
Source
Drain
Body
Diode
0.8
1999
0.10
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