UPA2714GR NEC, UPA2714GR Datasheet - Page 2

• Manufacturer Part Number: UPA2714GR
• Description: SWITCHING N- AND P-CHANNEL POWER MOS FET
• Manufacturer: NEC

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 20
PG.
CHARACTERISTICS
PG.
I
0 V
G
= 2 mA
V
50
R
DD
G
D.U.T.
= 25
I
D
50
I
AS
D.U.T.
BV
DSS
Starting T
R
V
DD
L
V
DS
L
V
SYMBOL
DD
R
R
R
ch
V
V
| y
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
GS(off)
C
d(off)
Q
F(S-D)
Q
A
GSS
d(on)
DSS
t
t
t
oss
GS
GD
rr
fs
iss
rss
r
f
G
rr
= 25°C, All terminals are connected.)
|
Data Sheet G15982EJ2V0DS
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/ µ s
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 7 A, V
= 7 A, V
= 7 A
V
0
= 10 Ω
GS( )
= −30 V, V
= −10 V, I
= −10 V, I
= −10 V
= −15 V, I
= −24 V
=
= −10 V, I
= −4.5 V, I
= −4.0 V, I
= 0 V
= −10 V
= −10 V
Duty Cycle
= 1 s
m
TEST CIRCUIT 2 SWITCHING TIME
PG.
20 V, V
GS
GS
= 0 V
= 0 V
TEST CONDITIONS
D
D
D
D
D
D
GS
DS
= −1 mA
= −3.5 A
= −3.5 A
= −3.5 A
= −3.5 A
= −3.5 A
1%
= 0 V
= 0 V
R
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
V
V
−1.0
V
GS( )
DS( )
5
0
DS
0
10%
t
d(on)
90%
TYP.
1370
0.82
390
240
t
11
16
22
25
15
76
42
31
43
27
on
µ µ µ µ PA2714GR
8
4
9
10% 10%
t
r
V
MAX.
t
m
GS
−2.5
d(off)
−1
100
20
30
34
t
off
90%
90%
t
UNIT
f
mΩ
mΩ
mΩ
µ A
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V