UPA2719GR NEC, UPA2719GR Datasheet
UPA2719GR
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UPA2719GR Summary of contents
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... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...
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... BV DSS Starting T ch TEST CIRCUIT 3 GATE CHARGE D.U.T. = − Ω PG 25°C, All terminals are connected.) A SYMBOL TEST CONDITIONS − DSS GSS − − V ...
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ELECTRICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA -1000 I D(pulse) -100 ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -125 Pulsed -100 V = − -75 −4 V -50 - -0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 = − −4 − − Pulsed 0 - 100 T - Channel Temperature - °C ch SWITCHING CHARACTERISTICS ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 I = − − Ω − 20 → 0 ...
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