UPA800T NEC, UPA800T Datasheet - Page 2

• Manufacturer Part Number: UPA800T
• Description: HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
• Manufacturer: NEC

ELECTRICAL CHARACTERISTICS (T
h
TYPICAL CHARACTERISTICS (T
2
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
FE
Notes 1. Pulse Measurement: Pw
CLASSIFICATION
h
Marking
FE
Rank
Value
PARAMETER
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
200
100
20
10
0
0
V
CE
= 3 V
80 to 200
Base to Emitter Voltage V
Ambient Temperature T
KB
RL
I
P
C
50
T
- V
- T
BE
SYMBOL
A
Characteristics
|S
|S
Characteristics
I
I
h
NF
NF
0.5
C
CBO
EBO
f
21e
21e
FE
T
re
|
|
2
2
100
A
V
V
V
V
V
V
V
V
V
= 25 C)
BE
CB
EB
CE
CE
CB
CE
CE
CE
CE
Free Air
A
350 s, Duty cycle
A
(°C)
(V)
= 10 V, I
= 1 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 25 C)
150
1.0
C
C
C
C
C
C
C
E
E
= 0
= 5 mA
= 5 mA
= 0, f = 1 MHz
= 3 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 5 mA, f = 2 GHz
CONDITION
= 0
Note 1
2 %
Note 2
200
100
25
20
15
10
50
20
10
5
0
0.5
V
CE
= 3 V
Collector to Emitter Voltage V
1
I
h
C
Collector Current I
FE
MIN.
- V
5.5
4.5
5.5
80
- I
CE
C
Characteristics
Characteristics
5
5
TYP.
6.5
7.5
1.9
1.9
80
10
I
B
C
= 20 A
(mA)
40 A
CE
MAX.
(V)
200
1.0
1.0
0.7
3.2
3.2
1.0
50
UNIT
GHz
pF
dB
dB
dB
dB
PA800T
A
A