UPA835 NEC, UPA835 Datasheet - Page 2

• Manufacturer Part Number: UPA835
• Description: NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
• Manufacturer: NEC

ABSOLUTE MAXIMUM RATINGS (T
Note Mounted on 1.08 cm
ELECTRICAL CHARACTERISTICS (T
Notes 1. Pulse Measurement: PW
2
(1) Q1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
Parameter
Parameter
2
1.0 mm glass epoxy substrate.
Symbol
Symbol
P
V
V
V
S
I
I
T
h
C
NF
CBO
EBO
T
CBO
CEO
EBO
I
T
f
21e
350 s, Duty Cycle
C
stg
FE
Note
T
re
j
2
A
A
= +25 C)
= +25 C)
V
V
V
V
V
V
V
Data Sheet P14555EJ1V0DS00
CB
EB
CE
CE
CB
CE
CE
= 5 V, I
= 1 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
180 in 1 element
E
C
C
C
E
C
C
= 0
= 0
= 10 mA
= 10 mA, f = 2 GHz
= 0, f = 1 MHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz
Conditions
150
Q1
30
2%
9
6
2
Note 1
230 in 2 elements
Note 2
65 to +150
Ratings
MIN.
10.0
7.0
75
200 in 1 element
100
150
Q2
20
12
3
TYP.
12.0
0.4
1.5
8.5
MAX.
150
0.1
0.1
0.7
2.5
PA835TC
GHz
Unit
mW
Unit
mA
pF
dB
dB
V
V
V
C
C
A
A