UPA836TC NEC, UPA836TC Datasheet
UPA836TC
Manufacturer Part Number
UPA836TC
Description
NPN SILICON EPITAXIAL TWIN TRANSISTOR
Manufacturer
NEC
Datasheet
1.UPA836TC.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPA836TC-T1
Manufacturer:
NEC
Quantity:
50 700
Company:
Part Number:
UPA836TC-T1
Manufacturer:
CMD
Quantity:
1 618
FEATURES
The UPA836TC contains one NE685 and one NE688 NPN
high frequency silicon bipolar chip. NEC's new ultra small TC
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
ELECTRICAL CHARACTERISTICS
• SMALL PACKAGE OUTLINE:
• LOW HEIGHT PROFILE:
• FLAT LEAD STYLE:
• TWO DIFFERENT DIE TYPES:
DESCRIPTION
Notes: 1. Pulsed measurement, pulse width
NPN SILICON EPITAXIAL TWIN TRANSISTOR
1.5 mm x 1.1 mm, 33% smaller than conventional
SOT-363 package
Just 0.55 mm high
Reduced lead inductance improves electrical
performance
Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor
SYMBOLS
|S
|S
|S
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
I
I
I
I
h
Cre
h
Cre
CBO
NF
CBO
NF
NF
EBO
EBO
21E
21E
21E
f
f
f
FE
FE
T
T
T
guard pin of capacitances meter.
|
|
|
2
2
2
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
Gain Bandwidth at V
Feedback Capacitance
Insertion Power Gain at V
Noise Figure at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
Gain Bandwidth (1) at V
Gain Bandwidth (2) at V
Feedback Capacitance
Insertion Power Gain (1) at V
Insertion Power Gain (2) at V
Noise Figure (1) at V
Noise Figure (2) at V
PARAMETERS AND CONDITIONS
PACKAGE OUTLINE
PART NUMBER
1
1
CE
at V
at V
CE
= 3 V, I
CE
CE
CE
CE
2
2
= 3 V, I
= 1 V, I
= 3 V, I
CE
CE
at V
at V
= 3 V, I
= 1 V, I
CE
PRELIMINARY DATA SHEET
EB
EB
= 1 V, I
= 3 V, I
C
350 s, duty cycle
CB
CB
CB
= 3 V, I
CB
CE
CE
= 3 mA, f = 2 GHz
= 1 V, I
= 1 V, I
C
C
C
= 5 V, I
= 5 V, I
= 3 V, I
= 1 V, I
= 1 V, I
= 3 V, I
C
C
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 7 mA, f = 2 GHz
C
C
= 10 mA
= 3 mA
(T
C
= 3 mA, f = 2 GHz
= 20 mA, f = 2 GHz
C
C
A
=10 mA, f = 2 GHz
E
E
= 0
= 0
E
E
= 25 C)
C
C
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
=3 mA, f = 2 GHz
=20 mA, f = 2 GHz
2 %.
OUTLINE DIMENSIONS
1.50 0.1
Note: Pin 1 is the lower left most pin
as the package lettering is oriented
and read left to right.
UNITS
0.96
GHz
GHz
GHz
dB
dB
dB
dB
dB
dB
pF
pF
A
A
A
A
0.55 0.05
0.48
0.48
California Eastern Laboratories
Package Outline TC
MIN
1
2
3
4.0
2.5
75
10
80
7
(TOP VIEW)
1.10 0.1
1.50 0.1
UPA836TC
6
5
4
(Units in mm)
UPA836TC
TC
TYP
0.75
0.4
8.5
1.5
4.5
9.0
3.5
6.5
1.7
1.5
12
0.20
+0.1
-0.05
PIN OUT
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
MAX
0.85
150
160
0.1
0.1
0.7
2.5
0.1
0.1
2.5
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UPA836TC Summary of contents
Page 1
... Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transistor DESCRIPTION The UPA836TC contains one NE685 and one NE688 NPN high frequency silicon bipolar chip. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscil- lator/buffer amplifier and other applications ...
Page 2
... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 1 ORDERING INFORMATION ( UNITS RATINGS PART NUMBER Q1 Q2 UPA836TC- 100 ...